MUKHERJEE, KALPARUPA
 Distribuzione geografica
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Continente #
EU - Europa 668
NA - Nord America 562
AS - Asia 86
SA - Sud America 1
Totale 1.317
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Nazione #
IE - Irlanda 580
US - Stati Uniti d'America 562
SG - Singapore 45
IT - Italia 43
CN - Cina 38
FR - Francia 12
FI - Finlandia 9
GB - Regno Unito 9
RU - Federazione Russa 5
DE - Germania 3
UA - Ucraina 3
HK - Hong Kong 2
BR - Brasile 1
IN - India 1
NL - Olanda 1
PL - Polonia 1
RS - Serbia 1
SE - Svezia 1
Totale 1.317
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Città #
Dublin 580
Fairfield 78
Chandler 57
Ashburn 46
Santa Clara 46
Singapore 38
Leesburg 34
Cambridge 30
Houston 29
Woodbridge 25
Padova 22
Seattle 21
Boardman 20
Ann Arbor 17
Wilmington 16
Medford 14
Princeton 14
San Diego 14
Des Moines 11
Beijing 10
Helsinki 9
London 7
Washington 6
Guangzhou 5
Turin 5
New York 4
Riese Pio X 4
Shanghai 4
Dallas 3
Kharkiv 3
Chicago 2
Hong Kong 2
Acton 1
Amsterdam 1
Belgrade 1
Draveil 1
Falls Church 1
Fuzhou 1
Hangzhou 1
Marseille 1
Norwalk 1
Pune 1
Roxbury 1
Scorzè 1
São Paulo 1
Vicenza 1
Warsaw 1
Totale 1.191
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Nome #
Vertical GaN devices: Process and reliability 358
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices 197
Study and characterization of GaN MOS capacitors: Planar vs trench topographies 104
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 94
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs 77
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices 57
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction 55
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors 51
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 49
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 49
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 46
Use of bilayer gate insulator in gan-on-si vertical trench mosfets: Impact on performance and reliability 39
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization 39
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 35
Threshold Voltage Variations in Semi-vertical GaN-on-Si FETs: A Comprehensive Study 34
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+ n− n diodes: The road to reliable vertical MOSFETs 34
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors 17
Totale 1.335
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Categoria #
all - tutte 5.308
article - articoli 3.776
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.084
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202056 0 0 0 0 0 0 0 0 15 27 2 12
2020/2021126 12 12 9 10 0 0 7 10 12 6 21 27
2021/2022186 0 10 52 16 2 12 11 16 15 8 8 36
2022/2023424 20 10 38 34 38 20 75 44 32 17 55 41
2023/2024396 68 73 53 60 52 56 2 2 3 9 8 10
2024/2025147 1 21 11 31 50 33 0 0 0 0 0 0
Totale 1.335